| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a NAND type flash memory element and its driving method. SOLUTION: The NAND type flash memory element comprises a cell array area 100b composed of first, second cell blocks B1, B2, a row decoder 300b driving the cell array area 100b. The row decoder 300b comprises first, second block driving sections; 310a, 310b connected respectively to the first, second cell blocks B1, B2, and the first block driving section 310a is provided with word driving transistors WDT11, WDT12, WDT13,..., WDT1n. Gate electrodes of the odd numbered word driving transistors WDT11, WDT13,... are connected to a first driving control line DCL11, and gate electrodes of the even numbered word driving transistors WDT12,... are connected to a second driving control line DCL12. The second block driving section 310b has the same configuration as the first block driving section 310a.</p> |
