发明名称 METHOD FOR MEASURING RESISTANCE VALUE OF MAGNETORESISTANCE EFFECT ELEMENT AND CIRCUIT FOR READING SIGNAL FOR MAGNETORESISTANCE EFFECT ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a resistance value measuring method by which the resistance value of a magnetoresistance effect element is measured with high precision. SOLUTION: A first output voltage value is detected from an amplifier 47 when a first inspection current specified by a fist current value is supplied to a resistor 45. A second output voltage value is detected, which is outputted from the amplifier 47 when a second inspection current specified by the second current value being different from the first current value is supplied to the resistor 45. The gain of the amplifier is calculated based on the actually measured first and second current values and the previously known first and second current values and the resistance value of the resistor. Then, an element inspecting current is supplied to each magnetic resistance effect element 44. In this case, an inspection output voltage value outputted from the amplifier 47 is detected. The resistance value of each magnetic resistance effect element is calculated based on the current values of the element inspection currents, the inspection output voltage values and the gain. The resistance value is specified based on the correct gain with high precision.
申请公布号 JP2001176007(A) 申请公布日期 2001.06.29
申请号 JP19990360353 申请日期 1999.12.20
申请人 FUJITSU LTD 发明人 MITSUNAGA NOBUYUKI
分类号 G01R33/09;G11B5/00;G11B5/012;G11B5/02;G11B5/39;G11B5/455;H01L43/08;(IPC1-7):G11B5/02 主分类号 G01R33/09
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