METHOD FOR PRODUCING HIGH PLANARITY SEMICONDUCTOR WAFER, AND HIGH PLANARITY SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a high planarity semiconductor wafer and a high planarity semiconductor wafer, in which high planarity is attained for every site through plasma etching. SOLUTION: The method for producing a high planarity semiconductor wafer by machining the surface of a semiconductor wafer through plasma etching comprises a step for measuring irregularities on the surface to be machined, and a step for locally plasma etching the surface to be machined, while varying the etching amount depending on the irregularities measured in a step for machining the surface to be machined thus planarizing the surface to be machined, wherein the plasma machining step separates the period of the irregularities D0 into a high-frequency component DH and a low-frequency component DL, based on a preset boundary frequency and uses only the irregularities of high frequency component for machining.