| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable a wiring formed in a thin film semiconductor device to be protected against disconnection that occurs on a stepped part and lessened in electric resistance. SOLUTION: A thin film semiconductor device is formed through such a manner in which bottom gate-type thin film transistors TFTs are formed on an insulating board as integrated. The thin film semiconductor contains a lower gate wiring 2 formed on the board, a gate electrode 5 which is kept at the same potential with the gate wiring 2 and patterned at the same time with the gate wiring 2, a semiconductor thin film 4 which forms the element region of the thin film transistor formed on the insulating film, an interlayer insulating film formed on the semiconductor thin film 4, and an upper signal wiring 3 connected to the thin film transistor TFT through the intermediary of a contact hole provided to the interlayer film. At this point, the gate wiring 2 is larger in thickness than the gate electrode 5 and lessened in electric resistance. The gate wiring 2 is of two-layered structure composed of a surface layer SL and an inner layer IL covered with the surface layer SL, so that a step which causes disconnection to the gate wiring 2 is relaxed.</p> |
