MANUFACTURING METHOD FOR GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To obtain a light emitting element in a blue region, a violet region or an ultraviolet light region in short wavelength. SOLUTION: An AlN layer 2, an Si-doped n-type GaAlN layer 3 (as an n- layer), a GaN layer 4 (as an active layer) and an Mg-doped GaAlN layer 5 (as a p-layer) are formed on a sapphire substrate 1. An SiO2 layer 7 is deposited on the Mg-doped GaAlN layer 5 (as the p-layer). After that, a window 7A is opened in a rectangular shape in a length of 1 mm and a width of 50μm. A metal electrode is formed in the part of a window 8 in the Mg-doped GaAlN layer 5 (as the p-layer), and a metal electrode is formed in the Si-doped n-type GaAlN layer 3 (as the n-layer).