| 摘要 |
PROBLEM TO BE SOLVED: To provide a wiring lead-out structure for a semiconductor device so as to improve the semiconductor device in both airtightness and reliability. SOLUTION: A resist mask 12 is provide on the surface of a silicon substrate 11, and an opening is provided by etching on a part where a diffusion wiring is formed. In succession, impurity element (e.g. boron) is implanted into the silicon substrate 11 through the opening. In succession, impurity elements implanted into the silicon substrate 11 are activated by a thermal treatment. After the impurity elements are activated, the resist mask 12 is removed, and thus a diffusion wiring 13 is formed. Thereafter, the silicon substrate 11 in which the diffusion wiring 13 is formed and a glass board 14 are bonded together by anodic bonding.
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