发明名称 PROTECTIVE DIODE AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a protective diode which lessens the distortion given to the waveform of a signal. SOLUTION: A protective diode, which has at least a first diode 12 making use of the pn junction of the semiconductor provided between a circuit-side terminal and a power terminal, and a second diode making use of the pn junction of the semiconductor provided between a circuit-side terminal and a GND terminal, is constituted so that the first diode and the second diode may be both biased reversely when the bias voltage Vbias between the power voltage Vcc and GND is applied to the circuit-side terminal, and that the variation of the capacity Ctotal of the protective diode viewed from the circuit-side terminal may be 10% or under when the voltage of the circuit-side terminal is changed within the range one-third the power voltage at the center of the bias voltage, that is within the range from Vbias-(Vcc+GND)/6 to Vbias+(Vcc+ GND). By this constitution, a protective diode with little distortion occurring in the signal wave form of the circuit can be obtained.
申请公布号 JP2001177062(A) 申请公布日期 2001.06.29
申请号 JP19990357697 申请日期 1999.12.16
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 UDAGAWA SHOJI
分类号 H01L27/04;H01L21/822;H01L29/861;(IPC1-7):H01L27/04 主分类号 H01L27/04
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