发明名称 |
Device and method for producing at least one SiC single crystal |
摘要 |
A device for producing a silicon carbide (SiC) single crystal contains a crucible having a storage region for holding a stock of solid SiC and having a crystal region for holding a SiC seed crystal. An insert made from glassy carbon is disposed in the crucible. In the method, solid SiC is sublimed as a result of the stock being heated and SiC in the gas phase is generated, which is conveyed to the SiC seed crystal, on which it grows as an SiC single crystal. A heat flux is controlled by an insert made from glassy carbon.
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申请公布号 |
US2001004875(A1) |
申请公布日期 |
2001.06.28 |
申请号 |
US20010761809 |
申请日期 |
2001.01.16 |
申请人 |
KUHN HARALD;RUPP ROLAND;STEIN RENE;VOLKL JOHANNES |
发明人 |
KUHN HARALD;RUPP ROLAND;STEIN RENE;VOLKL JOHANNES |
分类号 |
C30B29/36;C30B23/00;(IPC1-7):C30B1/00 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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