METAL MASK ETCHING OF SILICON

摘要

The present disclosure provides a method for etching trenches, contact vias, or similar features. The method requires the use of a metal-comprising masking material in combination with a fluorine-comprising plasma etchant. The plasma feed gas includes at least one fluorine-containing compound such as nitrogen trifluoride (NF>3<), carbon tetrafluoride (CF>4<), and sulfur hexafluoride (SF>6<). Oxygen (O>2<), or an oxygen-comprising compound, or hydrogen bromide (HBr), or a combination thereof may be added to the plasma feed gases.