METHOD FOR FORMING SELF-ALIGNED T-TYPE GATE TRANSISTOR

摘要

PURPOSE: A method for forming a self-aligned T-type gate transistor is provided to enhance productivity by simplifying a fabricating process. CONSTITUTION: A channel layer is formed by implanting silicon dopant ions into a silicon substrate. A lower gate metal is deposited thereon. A photoresist pattern is coated on the lower gate metal. An upper gate metal is deposited on a whole surface of the above structure. The lower gate metal is etched by using a microwave enhanced reactive ion etching method. A source/drain region is defined by implanting high density dopant ions. A fine gate pattern is formed by etching an etched gate pattern. An LDD(Lightly Doped Drain) layer is formed by using an ion implant method. An ohmic electrode is formed by performing a thermal process. A silicon nitride or a silicon oxide is deposited by using a plasma enhanced chemical vapor deposition method. A source/drain electrode(21) is formed by using an electric plating method.