| 发明名称 |
SOLUTION PROCESSED DEVICES |
| 摘要 |
A method for forming a transistor, comprising: depositing a first material from solution in a first solvent to form a first layer of the transistor; an d subsequently whilst the first material remains soluble in the first solvent, forming a second layer of the transistor by depositing over the first materi al a second material from solution in a second solvent in which the first material is substantially insoluble.
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| 申请公布号 |
CA2394881(A1) |
申请公布日期 |
2001.06.28 |
| 申请号 |
CA20002394881 |
申请日期 |
2000.12.21 |
| 申请人 |
PLASTIC LOGIC LIMITED |
发明人 |
FRIEND, RICHARD HENRY;SIRRINGHAUS, HENNING;KAWASE, TAKEO |
| 分类号 |
H01L21/28;H01L21/311;H01L21/336;H01L21/768;H01L27/32;H01L29/786;H01L51/00;H01L51/05;H01L51/30;H01L51/40;(IPC1-7):H01L21/04;H01L21/328 |
主分类号 |
H01L21/28 |
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