Production of optical switches comprises electrolytically etching nanostructured regions made of doped semiconductor material

摘要

Production of optical switches comprises electrolytically etching nanostructured regions made of a semiconductor material which is doped in such a way that the electrically non-conducting depletion layer forming on the surfaces produced has an average thickness of almost half the required wall thickness between two channels. Preferred Features: The semiconductor material is n-doped silicon or n-doped GaAs with a concentration of 10<13>-10<20>/cm<3> or InP or n-GaAs doped up to 10<17>/cm<3>. The direction of the crystallographic planes of the material is selected so that the required inner limiting surfaces of the channels and holes lie parallel.