| 发明名称 |
Slurry for chemical mechanical polishing |
| 摘要 |
In chemical mechanical polishing of a copper metal film, contamination of a polishing pad may be prevented by using a slurry for chemical mechanical polishing consisting of theta-alumina which mainly comprises secondary particles made of aggregated primary particles as polishing grains. |
| 申请公布号 |
US2001005009(A1) |
申请公布日期 |
2001.06.28 |
| 申请号 |
US20000752400 |
申请日期 |
2000.12.28 |
| 申请人 |
TSUCHIYA YASUAKI;WAKE TOMOKO;ITAKURA TETSUYUKI;SAKURAI SHIN;AOYAGI KENICHI |
发明人 |
TSUCHIYA YASUAKI;WAKE TOMOKO;ITAKURA TETSUYUKI;SAKURAI SHIN;AOYAGI KENICHI |
| 分类号 |
B24B37/00;C09G1/02;C09K3/14;C23F3/04;C23F3/06;H01L21/304;H01L21/321;(IPC1-7):C09K5/00 |
主分类号 |
B24B37/00 |
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