发明名称 |
Sensor comprises a micromechanical structure based on silicon integrated in the sensor chamber of a base wafer and a cover made of a transparent deposition layer and a sealing layer |
摘要 |
Sensor comprises a micromechanical structure based on silicon integrated in the sensor chamber of a base wafer and a cover (13) made of a first layer (32) permeable to an etching medium and reaction products and a hermetically sealed second layer (34). The cover covers the base wafer in the region of the sensor chamber. An Independent claim is also included for a process for the production of a sensor, comprising: filling the sensor chamber (28) in the base wafer with an oxide, especially CVD oxide or porous oxide; covering the sensor chamber (28) with a transparent deposition layer (32); removing the oxide in the sensor chamber using an etching medium; and applying a sealing layer (34) made of metal or insulator to hermetically seal the sensor chamber. Preferred Features: The deposition layer is made of polycrystalline silicon. The sealing layer is an insulator made of silicon nitride or silicon oxide, or aluminum.
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申请公布号 |
DE19961578(A1) |
申请公布日期 |
2001.06.28 |
申请号 |
DE19991061578 |
申请日期 |
1999.12.21 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
REICHENBACH, FRANK;PINTER, STEFAN;HENNING, FRANK;ARTMANN, HANS;BAUMANN, HELMUT;LAERMER, FRANZ;OFFENBERG, MICHAEL;BISCHOPINK, GEORG |
分类号 |
B81B3/00;B81B7/00;B81C1/00;(IPC1-7):B81B3/00 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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