Production of a ferroelectric capacitor on a semiconductor substrate comprises depositing a ferroelectric capacitor material over a first electrode, producing a second electrode and applying an alternating voltage on the capacitor

摘要

Production of a ferroelectric capacitor (10) on a semiconductor substrate (1) comprises producing first electrode (11); depositing ferroelectric capacitor material (13) over first electrode; producing second electrode (12) over the ferroelectric capacitor material; and applying an alternating voltage on the capacitor so that current loss in the capacitor is reduced by more than a factor of 10. An Independent claim is also included for the capacitor produced. Preferred Features: The second electrode is made from Al, W, Cu, TiNx, WNx, TaNx, TiWNx, WSix, TiSix or TaSix.