| 摘要 |
First NMOS and PMOS transistors for operating high speed, and second NMOS and PMOS transistors for reducing a leak current in an off state, are formed on the same p-type substrate. In a fabricating method, Boron is ion-implanted to the first and second NMOS transistor forming regions of the surface of the substrate to form p well. Subsequently, boron is ion-implanted to only the second NMOS transistor forming region additionally for threshold voltage adjustment to minimize the off-state leak current. Arsenic is ion-implanted to the first and second PMOS transistor forming regions of the surface of the substrate to form n well. Subsequently, Arsenic is ion-implanted only to the second PMOS transistor forming region additionally for threshold voltage adjustment to minimize the off-state leak current.
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