| 摘要 |
<p>A method and apparatus for reducing plasma-induced charging damage in a semiconducting device are provided. The method includes exposing an article having a dielectric material susceptible to plasma-induced charging, to vacuum-ultraviolet (VUV) radiation of an energy greater than the bandgap energy of the dielectric material during or after plasma processing of the device. The plasma-induced charge is conducted from, or recombined at, the charging site.</p> |
