| 摘要 |
A chemical vapor deposition reactor having a process chamber (101) accommodating a substrate holder (4a) for wafers (5), a first gas flow ( PHI 1) of reactive gases to process the wafers and a crown-shaped gas-collector surrounding the substrate-holder, wherein said reactor further comprises: a base plate (30) and a cover plate (20) disposed respectively beneath and above the substrate-holder, an outer ring (10) surrounding the gas-collector (16) and touching both the base plate (30) and the cover-plate (20), and a second flow ( PHI 2) of non-reactive gases propagating in spaces outside the process chamber limited by the base and cover plates and the outer ring, and said second flow acting as a counter-flow ( PHI 2) for preventing the first reactive gas flow ( PHI 1) to exit from the process chamber but through the gas-collector (16). Application: Chemical vapor Deposition Reactors for MOVPE Deposition Methods.
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