发明名称 |
Method for fabricating semiconductor device |
摘要 |
The present invention discloses a method for fabricating a semiconductor device. In a process for forming metal interconnection contact holes on both a gate electrode including an Si-rich SiON film as a mask insulating film in a peripheral circuit region and on a semiconductor substrate, the metal interconnection contact hole is formed according to a three-step etching process using a photoresist film pattern exposing the intended locations of a metal interconnection contacts as an etching mask. Accordingly, contact properties are improved by preventing damage to the semiconductor substrate, thereby reducing leakage current and improving yield.
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申请公布号 |
US2001005637(A1) |
申请公布日期 |
2001.06.28 |
申请号 |
US20000745429 |
申请日期 |
2000.12.26 |
申请人 |
KIM JEONG HO;KIM YU CHANG |
发明人 |
KIM JEONG HO;KIM YU CHANG |
分类号 |
H01L21/283;H01L21/60;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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