| 摘要 |
Provided is a system and continuous flow process for producing monodisperse semiconductor nanocrystals comprising reservoirs (A, B, C) for the starting materials, a mixing path (V3) in which the mixture of starting materials are mixed, a first reactor (T3) in which the mixture of starting materials is mixed with a coordinating solvent and in which nucleation of particles occurs, a second reactor (T4) in which controlled growth of the nanocrystals occurs, and a growth termination path (T5) in which the growth of the nanocrystals is halted. |
