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发明名称
Method for manufacturing thin gate silicon oxide layer
摘要
申请公布号
GB2347557(B)
申请公布日期
2001.06.27
申请号
GB20000003078
申请日期
2000.02.10
申请人
* NEC CORPORATION
发明人
FUMIHIRO * KOBA
分类号
H01L29/78;H01L21/28;H01L21/336;H01L29/51;(IPC1-7):H01L21/316
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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