Schottky diode on silicon carbide substrate

摘要

A vertical Schottky diode has a thin layer of N-type silicon carbide formed by epitaxial doping of a silicon carbide substrate. The periphery of an active zone of the diode has an epitaxial coating of P-type silicon carbide deep enough to withstand the maximum voltage for the diode. A section cuts across both these layers outside the zone. Voltage contours of 25 - 75 % of the maximum voltage extends along the peripheral zone up to the section. An Independent claim is included for the following: (a) Making a Schottky diode as above includes forming both epitaxial layers, forming the section, covering both layers with an insulating layer and depositing a metal layer contacting the N-type layer. Preferred Features: The distance from the outer edge of the P-type layer to the inner edge of the section is 30 - 60 micro m.