发明名称 |
Semiconductor light-emitting element and manufacturing method thereof |
摘要 |
There is disclosed a semiconductor light emitting element formed by selective growth and being high in light emitting efficiency, in which at least one GaN-based layer grown by ELO is stacked/formed on a sapphire substrate, and a fluorescent substance for converting an ultraviolet light to a visible light is contained in a selective growth mask material layer for use in this case. Since this fluorescent substance converts the ultraviolet light to the visible light, a binding efficiency of the ultraviolet light to the fluorescent substance is enhanced in either one of a center light emitting type and UV light emitting type of light emitting elements. By further containing the fluorescent substance into a passivation film, the efficiency is further enhanced. |
申请公布号 |
EP1111689(A2) |
申请公布日期 |
2001.06.27 |
申请号 |
EP20000127957 |
申请日期 |
2000.12.21 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FURUKAWA, CHISATO;SUGAWARA, HIDETO;SUZUKI, NUBOHIRO |
分类号 |
H01L33/00;H01L33/32;H01L33/44;H01L33/50;H01L33/58 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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