发明名称 Apparatus and method for forming thin film
摘要 The present invention is drawn to an apparatus for forming a thin film. The apparatus includes a vacuum chamber (10); a vacuum apparatus (11) connected to the vacuum chamber; a holder (20) placed in the vacuum chamber, which holder holds a substrate and is rotated by means of a rotating mechanism (21); a plasma CVD apparatus (30) and a sputtering apparatus (40), wherein the plasma CVD apparatus and the sputtering apparatus are placed in a single vacuum chamber and a thin film having a medium refractive index is formed on the substrate held by the holder, by means of the plasma CVD apparatus and the sputtering apparatus. The method making use of such an apparatus is also disclosed. <IMAGE>
申请公布号 EP1111087(A1) 申请公布日期 2001.06.27
申请号 EP19990125815 申请日期 1999.12.23
申请人 SHINCRON CO., LTD. 发明人 MATSUMOTO, SHIGEHARU;KIKUCHI, KAZUO;SONG, YIZHOU;SAKURAI, TAKESHI;SAISHO, SHINICHIRO
分类号 G02B1/10;C23C14/34;C23C14/56;C23C16/40;C23C16/44;C23C16/50;C23C28/04 主分类号 G02B1/10
代理机构 代理人
主权项
地址
您可能感兴趣的专利