发明名称 |
Specimen preparation by focused ion beam technique |
摘要 |
A method for preparing small area parallel lapping specimens by a focused ion beam technique is disclosed in which a multiple-staged ion beam milling process is used to prepare a specimen for microscopic examination. The method may be carried out by first providing a high current ion beam for removal of a top surface of a specimen exposing a surface that immediately covers the characteristic feature to be examined to define a small window area that contains the characteristic feature. The present invention novel method may further be combined with a wet etching step after the ion beam milling process is completed. In the wet etching step, a three dimensional surface containing the characteristic feature to be examined is revealed which can then be observed under a scanning electron microscope.
|
申请公布号 |
US6251782(B1) |
申请公布日期 |
2001.06.26 |
申请号 |
US19990361027 |
申请日期 |
1999.07.23 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
LEE ANGELA Y.C.;CHOU TING |
分类号 |
G01N1/32;(IPC1-7):H01L21/302 |
主分类号 |
G01N1/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|