发明名称 Specimen preparation by focused ion beam technique
摘要 A method for preparing small area parallel lapping specimens by a focused ion beam technique is disclosed in which a multiple-staged ion beam milling process is used to prepare a specimen for microscopic examination. The method may be carried out by first providing a high current ion beam for removal of a top surface of a specimen exposing a surface that immediately covers the characteristic feature to be examined to define a small window area that contains the characteristic feature. The present invention novel method may further be combined with a wet etching step after the ion beam milling process is completed. In the wet etching step, a three dimensional surface containing the characteristic feature to be examined is revealed which can then be observed under a scanning electron microscope.
申请公布号 US6251782(B1) 申请公布日期 2001.06.26
申请号 US19990361027 申请日期 1999.07.23
申请人 VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION 发明人 LEE ANGELA Y.C.;CHOU TING
分类号 G01N1/32;(IPC1-7):H01L21/302 主分类号 G01N1/32
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