发明名称 |
High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe |
摘要 |
The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution and improved placement. Specifically, the method of the present invention comprising a step of physically contacting a semiconductor surface having a layer of a dopant/bandgap source material thereon such that upon said physical contact impurity atoms from the dopant/bandgap source material are driven into the semiconductor substrate.
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申请公布号 |
US6251755(B1) |
申请公布日期 |
2001.06.26 |
申请号 |
US19990296368 |
申请日期 |
1999.04.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;ELLIS-MONAGHAN JOHN JOSEPH;SLINKMAN JAMES ALBERT |
分类号 |
G01Q60/38;G01Q80/00;H01L21/00;H01L21/18;H01L21/225;H01L29/10;H01L29/80;(IPC1-7):H01L21/04 |
主分类号 |
G01Q60/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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