| 摘要 |
The present invention provides a method and apparatus for non-destructive, in situ measuring thicknesses of layers on substrates. The method and device uses a probe including a radioactive source in a source holder and a photodetector mounted behind the source for detection of backscattered photons. In one aspect the method is used to measure the thickness of paint deposited onto metal substrates. The source holder and photodetector array forms a cylindrically symmetric probe for producing an axially symmetric beam of primary photons. A source containing radioactive 109Cd producing high energy photons of energy 22 and 25 keV is spaced from the painted surface so the photons impinge on the painted substrate. The intensity of photons backscattered by Compton scattering in the paint layer is proportional to the mass density of the paint to give a direct measurement of the paint thickness. The photons penetrating through to the substrate are absorbed within the substrate. The device also provides a method for calculating the distance from the source holder to the substrate using backscattering of gamma rays.
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