Method for enhancing adhesion of photo-resist to silicon nitride surfaces

摘要

A method for enhancing adhesion of photo-resist to silicon nitride surfaces is disclosed. An oxidation process is first performed on the surface of the semiconductor wafer using ozone-dissolved deionized water to transform most of the dangle bonds and Si-N bonds on the surface of the silicon nitride layer into Si-O bonds or Si-ON bonds. An HMDS layer is then formed on the surface of the silicon nitride layer. A photo-resist layer is next formed on the surface of the HMDS layer. Finally, a soft bake process is performed to remove solvents from the photo-resist layer and an exposure process is performed on the photo-resist layer to define a predetermined pattern in the photo-resist layer.