Method of forming a self-aligned silicide on a semiconductor wafer

摘要

This invention provides a method of forming a self-aligned silicide of a semiconductor wafer, the surface of the semiconductor wafer comprising at least one silicon device. A cobalt-containing metallic layer is formed on the semiconductor wafer which covers on the surface of the silicon device. A first thermal treatment process is performed to rapidly heat the semiconductor wafer up to 300~500° C. for 10~50 seconds and form Co2Si on the surface of the silicon device. A second thermal treatment process is performed to rapidly heat the semiconductor wafer up to 400~680° C. for 20~50 seconds and then cool down the semiconductor wafer afterwards so as to convert Co2Si into CoSi. An etching process is performed to remove the metallic layer. A third thermal treatment process is performed to rapidly heat the semiconductor wafer up to 700~950° C. for 30~60 seconds and then cool down the semiconductor wafer afterward so as to convert CoSi into the self-aligned silicide.