| 摘要 |
A substrate holder 90 where a thin film has accumulated on the surface of the holding claws 91 is transferred in a state where no substrate 9 is being held into a film removal chamber 70 which is established branching off in such a way that the vacuum is connected from the square transfer path 80 along which a plurality of vacuum chambers including the film deposition chambers 51, 52, 53, 54 and 50 is established. A high frequency power supply 73 is connected via the movable electrode 74 to the holder body 92 and a high frequency electric field is established within the film removal chamber 70. A plasma is formed by generating a high frequency discharge in the gas which is being delivered by means of the gas delivery system 72 and the accumulated film on the surface of the holding claws 91 is removed in a vacuum by sputter etching due to ion impacts.
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