SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to be capable of improving the degree of integration. CONSTITUTION: The first to third protrusion(31,32,33) are spaced apart from each other at a semiconductor substrate. A floating gate(24) is formed at both sidewalls of the first and third protrusion. A control gate(27) is formed by an anisotropic etching process for enclosing the floating gate. The second gate is formed at both sidewalls of the second protrusion by carrying out an anisotropic etching process. An interlayer dielectric(39) is deposited on the entire surface of the resultant structure. An upper line(40) is formed on the interlayer dielectric for being electrically connected with the second protrusion.