发明名称 Gas distribution in deposition chambers
摘要 An improved deposition chamber (2) includes a housing (4) defining a vacuum chamber (18) which houses a substrate support (14). A set of first nozzles (34) have orifices (38) opening into the vacuum chamber in a circumferential pattern spaced apart from and generally overlying the periphery (40) of the substrate support. One or more seconds nozzle (56, 56a), positioned centrally above the substrate support, inject process gases into the vacuum chamber to improve deposition thickness uniformity. Deposition thickness uniformity is also improved by ensuring that the process gases are supplied to the first nozzles at the same pressure. If needed, enhanced cleaning of the nozzles can be achieved by slowly drawing a cleaning gas from within the vacuum chamber in a reverse flow direction through the nozzles using a vacuum pump (84).
申请公布号 US6251187(B1) 申请公布日期 2001.06.26
申请号 US19990433086 申请日期 1999.11.03
申请人 APPLIED MATERIALS, INC. 发明人 LI SHIJIAN;REDEKER FRED C.;ISHIKAWA TETSUYA
分类号 C23C16/44;C23C16/455;C23C16/50;C23C16/507;C23C16/509;C23C16/517;C23C16/52;H01J37/32;H01L21/205;H01L21/31;(IPC1-7):C23C16/00 主分类号 C23C16/44
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