发明名称 FORMATION OF METAL OXIDE FILM
摘要 PROBLEM TO BE SOLVED: To form a metal oxide film constituting a protective film, a transparent electrode film or a dielectric substance film at a low cost. SOLUTION: This method for forming the metal oxide film to solve the subject is characterized in that a fixed part of a substrate is coated with a coating composition containing an aliphatic acid salt or an alkoxide of metal as a raw material for the metal oxide film constituting the protective film, the transparent electrode film or the dielectric substance film to form a primary film. The primary film is irradiated with ultraviolet rays in an oxidizing atmosphere to form the metal oxide film.
申请公布号 JP2001172006(A) 申请公布日期 2001.06.26
申请号 JP19990356117 申请日期 1999.12.15
申请人 FUJITSU LTD 发明人 NAKAZAWA AKIRA
分类号 G02F1/1343;B05D3/06;B05D7/00;B05D7/24;C01B13/14;C03C17/27;C03C17/34;G09F9/313;H01J9/02;H01J11/22;H01J11/34;H01J11/38;H01J11/40;(IPC1-7):C01B13/14;G02F1/134 主分类号 G02F1/1343
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