| 发明名称 |
Method to improve the roughness of metal deposition on low-k material |
| 摘要 |
A new method is provided to treat the surface of a low-k material. The invention is specifically aimed at the improvement of the TaN barrier layer that is used in the deposition of a dual damascene structure. The invention uses e-beam exposure to improve the barrier metal (PVD TaN) properties for copper and low-k applications.
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| 申请公布号 |
US6251806(B1) |
申请公布日期 |
2001.06.26 |
| 申请号 |
US19990373251 |
申请日期 |
1999.08.12 |
| 申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
CHANG CHUNG-I;CHEN LAI-JUH |
| 分类号 |
H01L21/3105;H01L21/312;H01L21/768;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/3105 |
| 代理机构 |
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