发明名称 |
Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process |
摘要 |
The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.
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申请公布号 |
US6251183(B1) |
申请公布日期 |
2001.06.26 |
申请号 |
US19990316342 |
申请日期 |
1999.05.21 |
申请人 |
MIDWEST RESEARCH INSTITUTE |
发明人 |
IWANCIZKO EUGENE;JONES KIM M.;CRANDALL RICHARD S.;NELSON BRENT P.;MAHAN ARCHIE HARVIN |
分类号 |
C30B25/02;C30B25/10;(IPC1-7):C30B25/14 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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