| 摘要 |
A hydrogen silsesquloxane resin film is formed flat by spin-coating or another such method on the surface of a semiconductor substrate or another such treatment wafer 38, after which the above-mentioned resin film is subjected to a heat treatment in an inert gas atmosphere to form a silicon oxide film of preceramic phase. In a hot plate type of heating apparatus, the wafer 38 is placed on a conveyor belt 34 and moved above a heat-generating block 30, which heats the wafer in the open air and converts the preceramic-phase silicon oxide film into a ceramic-phase silicon oxide film. The silane generated during heating does not adhere to the wafer surface as SiO2 particles, so no microscopic protrusions are produced. N2 or another such inert gas may be blown at the wafer 38 during heating.
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