发明名称 |
Method and apparatus with heat treatment for stripping photoresist to eliminate post-strip photoresist extrusion defects |
摘要 |
A method for removing a photoresist layer from a semiconductor substrate following a conventional dry etching step. A first wet chemical treatment strips the photoresist. A second dry ash with oxygen plasma completes the photoresist removal. To assure complete removal of photoresist imbedded on or within the material underlying the photoresist film, the semiconductor substrate is preheat treated to a temperature in the range of 150 to 250 degrees Centigrade to release the photoresist prior to the second dry ash with oxygen plasma operation. In particular, this method eliminates photoresist extrusion defects from occurring during a bond pad alloy operation.
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申请公布号 |
US6251794(B1) |
申请公布日期 |
2001.06.26 |
申请号 |
US19990252627 |
申请日期 |
1999.02.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
PENG CHIANG-JEN;LIN CHING-CHUNG |
分类号 |
H01L21/311;H01L21/60;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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地址 |
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