发明名称 |
Substrate processing apparatus and substrate processing method |
摘要 |
The present invention is constituted so as to improve a quartz gas supply portion utilized in a normal pressure furnace, and to keep to a minimum the damage incurred by a normal pressure furnace by the shock from an earthquake. Quartz gas supply piping 25 for supplying a reactant gas is connected to a quartz reaction tube 4, which constitutes a furnace body. A stress concentration portion 23 for concentrating stress by prioritizing another location when vibration occurs in a furnace body is formed on this gas supply piping 25. The stress concentration portion 23 is disposed on the side of a source-side gas supply pipe 8, which is in front of a pipe clamp 21 that connects the source-side gas supply pipe 8 to a reaction tube-side gas supply pipe 7 mounted to the reaction tube 4. As a stress concentration portion 23, the simplest of V-grooves can be formed in the circumferential direction.
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申请公布号 |
US6251189(B1) |
申请公布日期 |
2001.06.26 |
申请号 |
US20000502219 |
申请日期 |
2000.02.11 |
申请人 |
KOKUSAI ELECTRIC CO., LTD. |
发明人 |
ODAKE SHIGERU;MATSUMOTO NAOKI;MORITA SHINYA;TOMETSUKA KOUJI |
分类号 |
H01L21/22;C23C16/44;C30B25/14;H01L21/00;H01L21/31;(IPC1-7):C23C16/00 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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