SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PURPOSE: To increase a surface area by controlling the surface morphology of a storage node electrode at a capacity part. CONSTITUTION: A capacity part comprising at least a capacity insulating film 2 and a storage node electrode 1 contacting to the capacity insulating film 2 is provided. Here, a high melting-point metal nitride film is formed as the storage node electrode 1 into a form having a specified surface morphology, with the capacity insulating film 2 formed on the storage node electrode 1.