| 发明名称 |
PLANARIZED COPPER CLEANING FOR REDUCING DEFECTS |
| 摘要 |
PURPOSE: To provide a method for treating a copper or copper alloy substrate surface with a composition and corrosion inhibitor solution to minimize defect formation and surface corrosion. CONSTITUTION: A method for treating a copper or copper alloy substrate surface includes application of a composition which includes one or more chelating agents, a pH adjusting agent to produce a pH between about 3 and about 11, and a deionized water, and then application of a corrosion inhibitor solution. The composition may further comprise a reducing agent and/or corrosion inhibitor. The method may further comprise application of the corrosion inhibitor solution prior to treating the substrate surface with the composition.
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| 申请公布号 |
KR20010051992(A) |
申请公布日期 |
2001.06.25 |
| 申请号 |
KR20000071209 |
申请日期 |
2000.11.28 |
| 申请人 |
APPLIED MATERIALS INC. |
发明人 |
CHANDRACHOOD MADHAVI;EMAMI RAMIN;LI SHIJIAN;REDEKER FRED C.;SEN-HOU KOO |
| 分类号 |
H01L21/3205;H01L21/02;H01L21/304;H01L21/306;H01L21/321;H01L21/3213;H01L21/768;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/3205 |
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