发明名称 APPARATUS FOR PROCESSING SUBSTRATE
摘要 PURPOSE: An apparatus for processing a substrate is provided to prevent an increasing phenomenon of an edge portion of a coated layer by coating uniformly a resist layer. CONSTITUTION: A spin chuck(10) is used for absorbing and keeping a wafer(W) and rotating and elevating the wafer(W). A supply nozzle(11) is formed on an upper portion of the spin chuck(10) in order to drop a resist solution on the wafer(W). The supply nozzle(11) is connected with a resist solution tank(14) through a supply tube(12) and a control valve(13). The supply nozzle(11) is formed at a front end portion of a Z drive portion(15) by a folder(17). A base portion of the Z drive portion(15) is supported by a Y-directional mobile portion(16). An air flow control plate(25) is installed at a gap between the wafer(W) and an inner circumference of a cup(24). An exhaust tube(30) is installed under the cup(24). The exhaust tube(30) is connected with a pump(32) through a control valve(31).
申请公布号 KR20010050979(A) 申请公布日期 2001.06.25
申请号 KR20000059961 申请日期 2000.10.12
申请人 TOKYO ELECTRON LIMITED 发明人 FUJIMOTO AKIHIRO;YOSHIHARA KOSUKE
分类号 H01L21/027;H01L21/00;(IPC1-7):H01L21/027 主分类号 H01L21/027
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