| 摘要 |
PURPOSE: To provide an SOC at a low cost where the entire element is sped up with a sufficient characteristics at a DRAM part, related to a DRAM mixed semiconductor device (SOC) where a DRAM part and a logic part are formed on the same substrate. CONSTITUTION: A silicide is formed at least at a DRAM part, the entire surface of a source/drain region 10 of the transistor of a logic part, and the surface of gate 6 simultaneously, in the same process. |
