NITRIDE BASED TRANSISTORS ON SEMI-INSULATING SILICON CARBIDE SUBSTRATES,申请号KR1020007014069-传众专利搜索

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发明名称	NITRIDE BASED TRANSISTORS ON SEMI-INSULATING SILICON CARBIDE SUBSTRATES
摘要
申请公布号	KR20010052773(A)	申请公布日期	2001.06.25
申请号	KR1020007014069	申请日期	2000.12.11
申请人		发明人
分类号	H01L29/778	主分类号	H01L29/778
代理机构		代理人
主权项
地址

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