POLYMER, RESIST MATERIAL AND METHOD FOR FORMING PATTERN

摘要

PURPOSE: Provided are a polymer and resist materials which can sense high energy rays, has excellent sensitivity, resolution and etching resistance, therefore it is useful for microfabrications using electron beams or far UV light, and can especially easily form micropatterns vertical to substrates, because the absorption of rays at the exposure wavelengths of ArF excimer laser or KrF excimer laser is small. CONSTITUTION: The polymer compound having a weight-average mol.wt. of 1,000 to 500,000 and having units represented by the general formula(1) or (2) £R1 is a group unstable against an acid; R2 is H or a linear or branched C1-C4 alkyl; Z is C2-C10 tetravalent hydrocarbon; and k is 0 or 1|.