| 摘要 |
PURPOSE: A modified heterojunction bipolar transistor is provided to achieve a structure for material with high efficiency and low-voltage operability. CONSTITUTION: The new metmorphic heterojunction bipolar transistor has a semi- insulating Ga As substrate, undoped modified barrier film, and a heavily-doped n-type InGaAs film, forming an ohmic electrode of a collector in response with the structure of material for a GaAs wafer. Therefore, the modified heterojunction bipolar transistor includes a lightly-doped n-type InGaAs or InP or InAlAs film, forming a collector of the modified heterojunction bipolar transistor, heavily-doped n-type InGaAs film forming a base of the modified heterojunction bipolar transistor for an ohmic base electrode, an n-type InGaAs or inclined AlInGaAs or InP film forming an emitter of the modified heterojunction bipolar transistor, and the heavily-doped InGaAs film forming an ohmic emitter electrode of the modified heterojunction bipolar transistor.
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