| 摘要 |
PURPOSE: To provide an etching method for obtaining a fine machined shape, especially a vertical shape having less bowing when machining an insulating film in semiconductor manufacturing. CONSTITUTION: Amount of O, F or N radical incident quantity that becomes excessive at the initial stage of etching is controlled with a gas flow rate or the consumption quantity of O, F and N in an inner wall face is controlled with etching time to suppress excessive O, F and N. The flow rate or consumption quantity is controlled, based on a plasma measurement result in etching and a stably etched shape is obtained. Etching rate and selectivity are maintained, and bowing can be reduced in the work of a hole and an organic film in an insulating film. Thus, a semiconductor device can be manufactured more finely.
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