| 摘要 |
PURPOSE: An apparatus and a method for physical vapor deposition are provided to achieve conformal step coverage on a substrate by ionized metal plasma deposition. CONSTITUTION: A target(104) provides a source of material to be sputtered and ionized by a plasma maintained by a coil(122). The ionized material is deposited on the substrate that is biased to a negative voltage. A power supply(130) coupled to the target supplies a modulated or time-varying signal thereto during processing. Preferably, the modulated signal includes a negative voltage portion and a positive voltage portion. The negative voltage portion and the positive voltage portion are alternated to cycle between a center-strong sputter step and an edge-strong sputter step. The film quality and uniformity can be controlled by adjusting the frequency and amplitude of the signal, the duration of the positive portion of the signal, the power supplied to each of the support member and the coil, and other process parameters.
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