| 摘要 |
PURPOSE: To cancel hump characteristics of a semiconductor device equipped with a polysilicon gate electrode provided over an element isolation region and an element forming region. CONSTITUTION: A semiconductor device 10 is equipped with an element forming region 16 where a gate oxide film 14 is formed on a part of a P well 12, an STI 18 adjacent to the element forming region 16, and a polysilicon gate electrode 20 which is provided over the STI 18 and the gate oxide film 14. The polysilicon gate electrode 20 located on the gate oxide film 14 is composed of three components, ends 20a adjacent to the STI 18 and a center 20b, where the ends 20a are of P-type, and the center 20b is of N-type. A work function difference between the end 20a and the P well 12 is smaller than that between the center 20b and the P well, so that the threshold voltage VT of the semiconductor device 10 can be set high. |
