THIN FILM FOR CAPPING LAYER EXTREME LOW PERMITTIVITY CONSTANT

摘要

PURPOSE: A thin film for capping layer extreme low permittivity constant is provided, which dose not damage the low permittivity film and increase the chemical properties of the low permittivity film. CONSTITUTION: In the method for capping layer extreme low permittivity film, an extreme low permittivity film is formed on a substrate(12) and a silicon oxide capping layer is deposited on the extreme low permittivity film using an oxygen-deficient plasma process. At this time, the silicon oxide capping layer having dielectric constant with about 5 is generated. The silicon oxide capping layer is used to resist a copper diffusion.