METHOD FOR MANUFACTURING ARRAY OF MICROELECTRONIC ELEMENTS

摘要

PURPOSE: A method for manufacturing an array of microelectronic elements is provided to improve reliability, by using a conductive diffusion barrier material to fill a via so that a solid state reaction between a metal including a wordline and a Si diode is prevented. CONSTITUTION: Ions are implanted into a planar region in a selected depth of the first wafer(4) through the first surface of the first wafer made of a semiconductor material to form the first wafer, such that the ions are ions of an element selected from hydrogen gas and noble gas. The second wafer(17) made of a semiconductor material is prepared, wherein the second wafer includes a dielectric material layer having the second surface and metal conductor patterns electrically insulated from each other are disposed in the material layer. The metal conductor is extended to the second surface and includes a space-apart conductive region exposed on the second surface. The first wafer is located on the second wafer, wherein the first surface of the first wafer is adhered in parallel with the second surface and the conductor region exposed on the second surface so that an electrical contact is performed. A fracture is induced to occur along the planar region of the first wafer so that a semiconductor layer of the first wafer is defined/confined between the first surface and a fracture surface formed in the planar region.